Sic Silicon Carbide Ceramic Plate as Refractory Material

Min.Order: 10
Product origin: Zhuzhou, Hunan, China
Infringement complaint: complaintComplaint
US$ 8

Description

SiC Silicon Carbide Ceramic Plate as Refractory Material





Performance for Silicon Carbide Ceramic :

 
ItemUnitData
SiC Content%≥98.5
Working Temperature°C1380
Densityg/cm3≥3.1
Porosity%<0.1
Bending StrengthMPA250(20°C)
280(1200°C )
Elastic ModulusGPA330(20°C)
300(1200°C )
Thermal ConductivityW/ M·K45(1200°C )
Coefficient of Thermal ExpansionK-1×10-64.5
Moh's Hardness 13
Acid-base Property Excellent
 



   
     
     
               





 

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