Complaint
Mechanical characteristics | |
Substrate materia | P-type mono-crystalline silicon wafer-PERC |
| Cell Thickness | 160μm±16μm |
| Front side(-) | 12*0.05mm±0.03mm bus bars(silver)196 lines, Silicon oxide + bule silicon nitride compound antireflection coating(PID Free) |
Back side(+) | 1.4±0.3mm wide soldering pads(silver), Silicon oxynitride and Aluminum lines back-surface field, Laser design of vertical bus bars |
Dimension | 210mm*210mm±0.5mm |
Electrical Characteristics | ||||||
| Grade | Eff(%) | Vmpp(V) | Impp(A) | Voc(V) | Isc(A) | Max output(w) |
| 1 | 23.1 | 0.69 | 18.186 | 0.59 | 17.261 | 10.18 |
| 2 | 23 | 0.689 | 18.166 | 0.589 | 17.216 | 10.14 |
| 3 | 22.9 | 0.688 | 18.14 | 0.587 | 17.206 | 10.1 |
| 4 | 22.8 | 0.687 | 18.125 | 0.586 | 17.151 | 10.05 |
| 5 | 22.7 | 0.686 | 18.108 | 0.584 | 17.14 | 10.01 |
| 6 | 22.6 | 0.685 | 18.088 | 0.583 | 17.101 | 9.97 |
| 7 | 22.5 | 0.685 | 18.062 | 0.581 | 17.074 | 9.92 |
| 8 | 22.4 | 0.684 | 18.049 | 0.579 | 17.064 | 9.88 |
| 9 | 22.3 | 0.682 | 18.03 | 0.577 | 17.036 | 9.83 |
| 10 | 22.2 | 0.681 | 18.016 | 0.575 | 17.026 | 9.79 |
| 11 | 22.1 | 0.68 | 17.955 | 0.574 | 16.986 | 9.75 |
