Complaint
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 240 | A |
| RDS(ON) , max @ VGS=10V | 35 | mΩ |
| Qg | 153.6 | nC |
| Product Name | Package | Marking |
| OSG65R035HTF | TO247 | OSG65R035HT |
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 80 | A |
| Continuous drain current1), TC=100 °C | 50 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
| Continuous diode forward current1), TC=25 °C | IS | 80 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
| Power dissipation3) TC=25 °C | PD | 455 | W |
| Single pulsed avalanche energy5) | EAS | 1700 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.27 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=2 mA | ||
| 700 | VGS=0 V, ID=2 mA, Tj=150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.8 | 4.0 | V | VDS=VGS, ID=2 mA | |
Drain-source on- state resistance | RDS(ON) | 0.028 | 0.035 | Ω | VGS=10 V, ID=40 A | |
| 0.075 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 5 | μA | VDS=650 V, VGS=0 V | ||
| Gate resistance | RG | 2.4 | Ω | ƒ= 1 MHz, Open drain |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 7549.2 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 447.1 | pF | |||
| Reverse transfer capacitance | Crss | 13.2 | pF | |||
| Turn-on delay time | td(on) | 52.3 | ns | VGS=10 V, VDS=400 V, RG=5 Ω, ID=40 A | ||
| Rise time | tr | 86.8 | ns | |||
| Turn-off delay time | td(off) | 165.2 | ns | |||
| Fall time | tf | 8.5 | ns |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 153.6 | nC | VGS=10 V, VDS=400 V, ID=40 A | ||
| Gate-source charge | Qgs | 41.8 | nC | |||
| Gate-drain charge | Qgd | 50.2 | nC | |||
| Gate plateau voltage | Vplateau | 5.8 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=80 A, VGS=0 V | ||
| Reverse recovery time | trr | 566.1 | ns | VR=400V, IS=40 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 13.2 | μC | |||
| Peak reverse recovery current | Irrm | 45.9 | A |
