Parameter | Value | Unit |
VDS, min @ Tj(max) | 700 | V |
ID, pulse | 36 | A |
RDS(ON), max @ VGS=10V | 340 | mΩ |
Qg | 9.6 | nC |
Product Name | Package | Marking |
OSS65R340DF | TO252 | OSS65R340D |
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 650 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1), TC=25 °C | ID | 12 | A |
Continuous drain current1), TC=100 °C | 7.6 | ||
Pulsed drain current2), TC=25 °C | ID, pulse | 36 | A |
Continuous diode forward current1), TC=25 °C | IS | 12 | A |
Diode pulsed current2), TC=25 °C | IS, pulse | 36 | A |
Power dissipation3), TC=25 °C | PD | 83 | W |
Single pulsed avalanche energy5) | EAS | 200 | mJ |
MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 1.5 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 μA | ||
700 | VGS=0 V, ID=250 μA, Tj=150 °C | |||||
Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=250 μA | |
Drain-source on- state resistance | RDS(ON) | 0.30 | 0.34 | Ω | VGS=10 V, ID=6 A | |
0.73 | VGS=10 V, ID=6 A, Tj=150 °C | |||||
Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
-100 | VGS=-30 V | |||||
Drain-source leakage current | IDSS | 1 | μA | VDS=650 V, VGS=0 V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 443.5 | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz | ||
Output capacitance | Coss | 59.6 | pF | |||
Reverse transfer capacitance | Crss | 1.7 | pF | |||
Turn-on delay time | td(on) | 22.4 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A | ||
Rise time | tr | 17.5 | ns | |||
Turn-off delay time | td(off) | 40.3 | ns | |||
Fall time | tf | 7.2 | ns |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 9.6 | nC | VGS=10 V, VDS=400 V, ID=6 A | ||
Gate-source charge | Qgs | 2.2 | nC | |||
Gate-drain charge | Qgd | 4.5 | nC | |||
Gate plateau voltage | Vplateau | 6.5 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V | ||
Reverse recovery time | trr | 236.5 | ns | VR=400 V, IS=6 A, di/dt=100 A/μs | ||
Reverse recovery charge | Qrr | 2.2 | μC | |||
Peak reverse recovery current | Irrm | 19.1 | A |