Complaint
Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in N-type semiconductors, and there are only a very small amount of free electrons in noble metals, electrons diffuse from the high concentration of B to the low concentration of A. Obviously, there are no holes in metal A, and there is no diffusion movement of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the electrical neutrality of the surface is destroyed, so a potential barrier is formed, and the direction of the electric field is B→A. But under the action of this electric field, the electrons in A will also produce a drifting movement from A→B, thereby weakening the electric field formed by the diffusion movement. When a space charge region with a certain width is established, the drifting movement of electrons caused by the electric field and the diffusion movement of electrons caused by different concentrations reach a relative balance, forming a Schottky barrier.
Schottky diode Schottky diode, also known as Schottky barrier diode (SBD), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small-signal detector diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc.
• Very small conduction losses
• Negligible switching losses
• Extremely fast switching
• Low forward voltage drop
• Avalanche capability specified
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