Complaint
Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in N-type semiconductors, and there are only a very small amount of free electrons in noble metals, electrons diffuse from the high concentration of B to the low concentration of A. Obviously, there are no holes in metal A, and there is no diffusion movement of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the electrical neutrality of the surface is destroyed, so a potential barrier is formed, and the direction of the electric field is B→A. But under the action of this electric field, the electrons in A will also produce a drifting movement from A→B, thereby weakening the electric field formed by the diffusion movement. When a space charge region with a certain width is established, the drifting movement of electrons caused by the electric field and the diffusion movement of electrons caused by different concentrations reach a relative balance, forming a Schottky barrier.
The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor, and an N-epitaxial layer with arsenic as a dopant is formed on it. The anode uses materials such as molybdenum or aluminum to make a barrier layer. Use silicon dioxide (SiO2) to eliminate the electric field in the edge area and improve the withstand voltage of the tube. The N-type substrate has a small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate, and its function is to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; on the contrary, if When reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.
In summary, the structure principle of Schottky rectifier is very different from PN junction rectifier. PN junction rectifier is usually called junction rectifier, and metal-half-conductor rectifier is called Schottky rectifier. . Schottky rectifier diode (SBD) is a rectifier diode with Schottky characteristic "metal semiconductor junction". Its forward starting voltage is low. In addition to the tungsten material, the metal layer can also be made of gold, molybdenum, nickel, titanium and other materials. It is widely used for its fast switching speed, large rectified current, voltage drop and low power consumption, and is especially suitable for high-frequency rectifier circuits and large current rectifier circuits.
Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters.Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
1.Pin diagram :
2.Absolute Ratings (limiting values):
3.Thermal resistance:
4.Static Electrical Characteristics:
• Very small conduction losses
• Negligible switching losses
• Extremely fast switching
• Low forward voltage drop
• Low capacitance
• Avalanche specification
• ECOPACK®2 compliant component for DPAK on demand
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advantage:
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