Insulated Gate Bipolar Transistor IGBT G40n120d to-247

Min.Order: 1,800
Product origin: Wuxi, Jiangsu, China
Infringement complaint: complaintComplaint
US$ -1

Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES1200V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)80A
Collector Current (Tc=100ºC)40A
Pulsed Collector CurrentICM160A
Diode Continuous Forward CurrentI@TC = 100 °C20A
Diode Maximum Forward CurrentIFM60A
Total DissipationTC=25ºCPD278W
TC=100ºCPD150W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =40A and VGE=15V
Applications
Inverter welding machine
General frequency converter
UPS
Motor control
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G40N120DTO-247G40N120DPb-freeTube300/box
 
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