10A 650V Sic Schottky Barrier Diode Dce10d65g4 to-263

Min.Order: 5,000
Product origin: Wuxi, Jiangsu, China
Infringement complaint: complaintComplaint
US$ 0.01 ~ 1.5

Description
25A 1700V SiC Schottky Barrier Diode

1 Description
SiC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.
 
Features
high voltage
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Positive Temperature Coefficient on VF
175ºC Operating Junction Temperature
Applications
Switching Mode Power Supplies
Power Factor Correction
Motor drive, PV inverter, wind power station
 
PARAMETERSYMBOLVALUEUNIT
 
Peak Repetitive Reverse VoltageVRRM650V
Working Peak Reverse VoltageVRWM650V
DC Blocking VoltageVR650V
 Forward Current(Tc≤135ºC)IF19A
(Tc≤160ºC)
10
Repetitive Peak Forward Surge Current (t=8.3ms)IFSM86A
Power dissipationPtot150W
Operating Junction Temperature RangeTj-55~175ºC
Storage Temperature RangeTstg-55~175ºC
Soldering Temperature
Tsold
260ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark Name
DCE10D65G4
TO-263
DCE10D65G4
 
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