Complaint
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 1200 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 100 | A | ||
| Collector Current | (Tc=100ºC) | 50 | A | ||
| Pulsed Collector Current | ICM | 200 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 25 | A | ||
| Diode Maximum Forward Current | IFM | 100 | A | ||
| Total Dissipation | TC=25ºC | Ptot | 460 | W | |
| TC=100ºC | Ptot | 230 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Low Vcesat |
| Low gate charge |
| Excellent switching speed |
| Easy paralleling capability due to positive temperature Coefficient in Vcesat |
| Tsc≥10μs |
| Fast recovery full current anti-parallel diode |
| Applications |
| Welding |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| G50N120D | TO-264 | G50N120D | Pb-free | Tube | 300/box |
