PARAMETER | SYMBOL | RATING | UNIT | ||
Collector-Emitter Voltage | VCES | 1200 | V | ||
Gate- Emitter Voltage | VGES | ±20 | V | ||
Collector Current | IC(T=25ºC) | 100 | A | ||
Collector Current | (Tc=100ºC) | 50 | A | ||
Pulsed Collector Current | ICM | 200 | A | ||
Diode Continuous Forward Current | IF @TC = 100 °C | 25 | A | ||
Diode Maximum Forward Current | IFM | 100 | A | ||
Total Dissipation | TC=25ºC | Ptot | 460 | W | |
TC=100ºC | Ptot | 230 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Low Vcesat |
Low gate charge |
Excellent switching speed |
Easy paralleling capability due to positive temperature Coefficient in Vcesat |
Tsc≥10μs |
Fast recovery full current anti-parallel diode |
Applications |
Welding |
UPS |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
G50N120D | TO-264 | G50N120D | Pb-free | Tube | 300/box |