Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet

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Product origin: Shanghai, China

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Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features

Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Ultra-fast and robust body diode

Applications

PC power
Telecom power
Server power
EV Charger
Motor driver

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	240	A
RDS(ON), max @ VGS=10V	38	mΩ
Qg	175	nC

Marking Information

Product Name	Package	Marking
OSG65R038HZF	TO247	OSG65R038HZ

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current¹⁾, TC=25 °C	ID	80	A
Continuous drain current¹⁾, TC=100 °C	ID	50	A
Pulsed drain current²⁾, TC=25 °C	ID, pulse	240	A
Continuous diode forward current¹⁾, TC=25 °C	IS	80	A
Diode pulsed current²⁾, TC=25 °C	IS, pulse	240	A
Power dissipation³⁾ ,TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2900	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	100	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
Drain-source breakdown voltage	BVDSS	700	770		V	VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on-state resistance	RDS(ON)		0.032	0.038	Ω	VGS=10 V, ID=40 A
Drain-source on-state resistance	RDS(ON)		0.083		Ω	VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
Gate-source leakage current	IGSS			-100	nA	VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9276		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		486		pF
Reverse transfer capacitance	Crss		12.8		pF
Effective output capacitance, energy related	Co(er)		278		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1477		pF	VGS=0 V, VDS=0 V-400 V
Turn-on delay time	td(on)		55.9		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		121.2		ns
Turn-off delay time	td(off)		114.2		ns
Fall time	tf		8.75		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		175.0		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		40.1		nC
Gate-drain charge	Qgd		76.1		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		180		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		15.2		A

Note

Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.

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