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Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet
Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet
Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet
Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet
Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet
Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet

Aec-Q101 Qualified for Automotive Applications Synchronous Rectification Systems Sfs04r013ugf Pdfn5 X 6 Low Driving Voltage 40V Mosfet

Min.Order: 660
Product origin: Shanghai, China
Infringement complaint: complaintComplaint
US$ 0.2

Description
General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.


Features
  • Low RDS(ON) & FOM (Figure of Merit)
  • Extremely low switching loss                                                                
  • Excellent reliability and uniformity
  • Fast switching and soft recovery
  • AEC-Q101 Qualified for Automotive Applications

Applications
  • Consumer electronic power supply
  • Motor control
  • Synchronous rectification
  • Isolated DC/DC convertor
  • Invertors


Key Performance Parameters

 
ParameterValueUnit
VDS40V
ID, pulse600A
RDS(ON) max @ VGS=10V1.1mΩ
Qg118.4nC

Marking Information

 
Product NamePackageMarking
SFS04R013UGFPDFN5 x 6SFS04R013UG

 
 
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
ParameterSymbolValueUnit
Drain source voltageVDS40V
Gate source voltageVGS±20V
Continuous drain current1), TC=25 °CID200A
Pulsed drain current2), TC=25 °CID, pulse600A
Continuous diode forward current1), TC=25 °CIS200A
Diode pulsed current2), TC=25 °CIS, Pulse600A
Power dissipation3), TC=25 °CPD178W
Single pulsed avalanche energy5)EAS144mJ
Operation and storage temperatureTstg,Tj-55 to 175°C

Thermal Characteristics
 
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.84°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source breakdown voltageBVDSS40  VVGS=0 V, ID=250 μA
Gate threshold voltageVGS(th)1.2 2.5VVDS=VGS, ID=250 μA
Drain-source on- state resistanceRDS(ON) 0.91.1mΩVGS=10 V, ID=20 A
Drain-source on- state resistanceRDS(ON) 1.52.0mΩVGS=6 V, ID=20 A
Gate-source leakage current
IGSS		  100
nA		VGS=20 V
  -100VGS=-20 V
Drain-source leakage currentIDSS  1uAVDS=40 V, VGS=0 V
Gate resistanceRG 3.2 Ωƒ=1 MHz, Open drain

Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 5453 pF
VGS=0 V, VDS=25 V,
ƒ=100 kHz
Output capacitanceCoss 1951 pF
Reverse transfer capacitanceCrss 113 pF
Turn-on delay timetd(on) 23.9 ns
VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A
Rise timetr 16.9 ns
Turn-off delay timetd(off) 80.4 ns
Fall timetf 97.7 ns

Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 85.6 nC

VGS=10 V VDS=40 V, ID=40 A,
Gate-source chargeQgs 17.6 nC
Gate-drain chargeQgd 14.5 nC
Gate plateau voltageVplateau 3.6 V

Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode forward voltageVSD  1.3VIS=20 A, VGS=0 V
Reverse recovery timetrr 71.1 ns
VR=40 V, IS=40 A,
di/dt=100 A/μs
Reverse recovery chargeQrr 50.1 nC
Peak reverse recovery currentIrrm 1.2 A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
VDD=30 V,VG=10 V, L=0.3 mH, starting Tj=25 °C.


 
 





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