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Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

Short Circuit Withstand Time 10μ S Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

Min.Order: 1,000
Product origin: Shanghai, China
Infringement complaint: complaintComplaint
US$ 0.1 ~ 0.6

Description
General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
  • Advanced TGBTTM technology
  • Excellent conduction and switching loss
  • Excellent stability and uniformity
  • Fast and soft antiparallel diode

Applications
  • Induction converters
  • Uninterruptible power supplies


Key Performance Parameters

 
ParameterValueUnit
VCES, min @ 25°C1200V
Maximum junction temperature175°C
IC, pulse160A
VCE(sat), typ @ VGE=15V1.45V
Qg214nC

Marking Information

 
Product NamePackageMarking
OST40N120HMFTO247OST40N120HM

 
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
 
ParameterSymbolValueUnit
Collector emitter voltageVCES1200V
Gate emitter voltage
VGES		±20V
Transient gate emitter voltage, TP≤0.5µs, D<0.001±25V
Continuous collector current1), TC=25ºC
IC		56A
Continuous collector current1), TC=100ºC40A
Pulsed collector current2), TC=25ºCIC, pulse160A
Diode forward current1), TC=25ºC
IF		56A
Diode forward current1), TC=100ºC40A
Diode pulsed current2), TC=25ºCIF, pulse160A
Power dissipation3), TC=25ºC
PD		357W
Power dissipation3), TC=100ºC179W
Operation and storage temperatureTstg, Tvj-55 to 175°C
Short circuit withstand time VGE=15 V, VCC≤600 V
Allowed number of short circuits<1000 Time between short circuits:≥1.0 S
Tvj=150 °C

tSC

10

μs

Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.42°C/W
Diode thermal resistance, junction-caseRθJC0.75°C/W
Thermal resistance, junction-ambient4)RθJA40°C/W
 

Electrical Characteristics at Tvj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Collector-emitter breakdown voltageV(BR)CES1200  VVGE=0 V, IC=0.5 mA


Collector-emitter saturation voltage


VCE(sat)		 1.451.8VVGE=15 V, IC=40 A Tvj=25°C
 1.65 VVGE=15 V, IC=40 A, Tvj =125°C
 1.8  VGE=15 V, IC=40 A, Tvj =175°C
Gate-emitter
threshold voltage		VGE(th)4.85.86.8VVCE=VGE, ID=0.5 mA


Diode forward voltage


VF		 1.92.1VVGE=0 V, IF=40 A Tvj =25°C
 1.6  VGE=0 V, IF=40 A, Tvj =125°C
 1.5  VGE=0 V, IF=40 A, Tvj =175°C
Gate-emitter
leakage current		IGES  100nAVCE=0 V, VGE=20 V
Zero gate voltage collector currentICES  10μAVCE=1200V, VGE=0 V
 

Dynamic Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCies 11270 pF
VGE=0 V, VCE=25 V,
ƒ=100 kHz
Output capacitanceCoes 242 pF
Reverse transfer capacitanceCres 10 pF
Turn-on delay timetd(on) 120 ns


VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A
Rise timetr 88 ns
Turn-off delay timetd(off) 246 ns
Fall timetf 160 ns
Turn-on energyEon 3.14 mJ
Turn-off energyEoff 1.02 mJ
Turn-on delay timetd(on) 112 ns


VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A
Rise timetr 51 ns
Turn-off delay timetd(off) 284 ns
Fall timetf 148 ns
Turn-on energyEon 1.32 mJ
Turn-off energyEoff 0.53 mJ

Gate Charge Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 214 nC
VGE=15 V, VCC=960 V, IC=40 A
Gate-emitter chargeQge 103 nC
Gate-collector chargeQgc 40 nC

Body Diode Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode reverse recovery timetrr 293 nsVR=600 V, IF=40 A,
diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery chargeQrr 2.7 μC
Diode peak reverse recovery currentIrrm 25 A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
 
Version 1: TO247-P package outline dimension


Ordering Information
 
Package TypeUnits/ TubeTubes/ Inner BoxUnits/ Inner BoxInner Boxes/ Carton BoxUnits/ Carton Box
TO247-P301133061980

Product Information
 
ProductPackagePb FreeRoHSHalogen Free
OST40N120HMFTO247yesyesyes


Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

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