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Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT

Automotive Applications Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT

Min.Order: 660
Product origin: Shanghai, China
Infringement complaint: complaintComplaint
US$ 5.6

Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features
  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Ultra-fast and robust body diode

Applications                                                                                           
  • PC power
  • Telecom power
  • Server power
  • EV Charger
  • Motor driver


Key Performance Parameters
 
ParameterValueUnit
VDS, min @ Tj(max)650V
ID, pulse240A
RDS(ON), max @ VGS=10V30mΩ
Qg178nC

Marking Information
 
Product NamePackageMarking
OSG60R030HZFTO247OSG60R030HZ
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
ParameterSymbolValueUnit
Drain-source voltageVDS600V
Gate-source voltageVGS±30V
Continuous drain current1), TC=25 °C
ID		80
A
Continuous drain current1), TC=100 °C50
Pulsed drain current2), TC=25 °CID, pulse240A
Continuous diode forward current1), TC=25 °CIS80A
Diode pulsed current2), TC=25 °CIS, pulse240A
Power dissipation3), TC=25 °CPD480W
Single pulsed avalanche energy5)EAS2500mJ
MOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt50V/ns
Operation and storage temperatureTstg, Tj-55 to 150°C

Thermal Characteristics
 
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.26°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source breakdown voltageBVDSS600  VVGS=0 V, ID=1 mA
Gate threshold voltageVGS(th)3.0 4.5VVDS=VGS, ID=2 mA,

Drain-source
on-state resistance
RDS(ON)		 0.0280.030
Ω		VGS=10 V, ID=40 A
 0.058 VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current
IGSS		  100
nA		VGS=30 V
  -100VGS=-30 V
Drain-source leakage currentIDSS  10μAVDS=600 V, VGS=0 V
Gate resistanceRG 2.1 Ωƒ=1 MHz, Open drain


Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 9343 pF
VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitanceCoss 708 pF
Reverse transfer capacitanceCrss 15 pF
Effective output capacitance, energy relatedCo(er) 345 pF
VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time relatedCo(tr) 1913 pF
Turn-on delay timetd(on) 52.1 ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise timetr 105.2 ns
Turn-off delay timetd(off) 125.7 ns
Fall timetf 4.1 ns

Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 177.9 nC

VGS=10 V, VDS=400 V, ID=40 A
Gate-source chargeQgs 37.4 nC
Gate-drain chargeQgd 78.4 nC
Gate plateau voltageVplateau 6.2 V

Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode forward voltageVSD  1.4VIS=80 A, VGS=0 V
Reverse recovery timetrr 186.6 ns
IS=40 A,
di/dt=100 A/μs
Reverse recovery chargeQrr 1.6 μC
Peak reverse recovery currentIrrm 15.4 A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
1. What service do you have ?

We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support . 
 
2. May I have some samples for testing?

We offer free samples for our customers and they only need to pay the freight for samples.

3. What about the delivery ?

Usually the lead time is about 1-4  weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?

This can be discussed based on the actual order situation. 
 
5. What about the shipment terms ?

EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients 

6. Do you have any minimum order quantity requirement?

Based on the different products, for first trial order to test, we can offer the quantity based on clients request,   for repeated order, MOQ is based on the minimum packaging quantity. 
 
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