Complaint
N-Type TOPCon cells are based on an n-doped crystalline silicon wafer.
Photovoltaic cells differ in their layer structure into positively charged P-type cells and negatively charged N-type cells. With P-type cells, the base layer is doped with boron, which has one electron less than silicon. This creates an electron hole and the positive charge carriers predominate. In N-type cells, the base layer is doped with phosphorus. This has one electron more than silicon. This doping generates free electrons.
The higher efficiency of N-type cells is caused by these free electrons. They are also responsible for the extremely low power losses and prevent phenomena such as PID and LID.
| Model of Solar Panel | GSM570M10-144HC | GSM575M10-144HC | GSM580M10-144HC | GSM585M10-144HC | GSM590M10-144HC |
| Peak Power Watts-Pmax(Wp)* | 570W | 575W | 580W | 585W | 590W |
| Maximum Power Voltage-Vmpp(V) | 42.07 | 42.22 | 42.37 | 42.52 | 42.67 |
| Maximum Power Current-Impp(A) | 13.55 | 13.62 | 13.69 | 13.76 | 13.83 |
| Open Circuit Voltage-Voc(V) | 50.74 | 50.88 | 51.02 | 51.16 | 51.30 |
| Short Circuit Current-Isc(A) | 14.31 | 14.39 | 14.47 | 14.55 | 14.63 |
| Module Efficiency (%) | 22.06 | 22.25 | 22.44 | 22.64 | 22.84 |
| Power Output Tolerance-Pmax(W) | 0~+5 | ||||
| Temperature Coefficient of Pmax | -0.3%/ºC | ||||
| Temperature Coefficient of Voc | -0.25%/ºC | ||||
| Temperature Coefficient of Isc | 0.046%/ºC | ||||
| STC | Irradiance 1000W/m2, Cell Temperature 25, Air Mass AM1.5 | ||||
2279*1134*35mm / 29.4KG
31 pieces / pallet, 620 pieces / 40HC
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