Goh1-Xxb Hall Effect Current Sensor (Compatible with LEM Hlsr)

Min.Order: 10
Product origin: Ningbo, Zhejiang, China
Infringement complaint: complaintComplaint
US$ 1.5

Description
GOH1-XXB Series Current Transducer

IPN = 10 ... 50 A
Ref:GOH1-10B, GOH1-16B, GOH1-20B, GOH1-32B, GOH1-40B, GOH1-50B
 
Introduction
 
The GOH1-xxB series is based on Hall technology and open -loop design. It is suitable for DC, AC, pulsed and any kind of irregular current measurement under the isolated conditions.


Dimensions (in mm)

ParameterSymbolUnitSpecificationConditions
MinTypicalMax
Primary nominal RMS currentIPNA±10A, ±16 A, ±20 A, ± 32 A, ±40 A, ±50 A,±120A 
Primary current, measuring rangeIPMA2.5X IPNFor UC>4.6V
Resistance of primary jumper @ TA=25ºCRP 0.21 T=25ºC
Supply voltage UCV4.555.5 
Reference voltage(output)VrefV2.492.52.51internal reference
Output voltage range @ IPMVout-VrefV-2 2 
Electrical offset voltage @ IP=0VOEmV-5 525ºC ,Vout-Vref
Temperature coefficient of VrefTCVrefppm/K-170 170-40ºC~105ºC
Temperature drift of VOEVOE_TRangemV-5 5-40ºC~105ºC
Sensitivity errorεG%-0.5 0.5Factory adjustment
Temperature coefficient of GTCGppm/K-170 170-40ºC~105ºC
Linearity error 0…IPNεL% of IPN-0.5 0.5 
Magnetic offset voltage(@10*IPN) referred to primaryUOMmV-2.5 2.5 
Output RMS noise voltageUNmVP-P 25  
 
mVRMS 2.5 
Reaction time @ 10% of IPNtraus 1.42@50A/us
Step response time to 90% of IPNtrus 1.82.5@50A/us
Frequency bandwidth (-3dB)BWkHz 250  
Accuracy @IPNX% of IPN-1 1 
Accuracy @IPN @ TAXTA% of IPN-2.5 2.5
 
 

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