Complaint
N-Type TOPCon cells are based on an n-doped crystalline silicon wafer.
Photovoltaic cells differ in their layer structure into positively charged P-type cells and negatively charged N-type cells. With P-type cells, the base layer is doped with boron, which has one electron less than silicon. This creates an electron hole and the positive charge carriers predominate. In N-type cells, the base layer is doped with phosphorus. This has one electron more than silicon. This doping generates free electrons.
The higher efficiency of N-type cells is caused by these free electrons. They are also responsible for the extremely low power losses and prevent phenomena such as PID and LID.
N TOPCON BIFACIAL SERIES
400W 405W 415W 420W 430W 440W 450W 460W 470W 500W 520W 550W 560W 600W 650W 685W
N TOPCON FULL BLACK BIFACIAL SERIES
415W 420W 430W 435W 560W 570W 580W 600W 650W 660W 670W 685W
| Model of Solar Panel | GSM415M10-108HBD | GSM420M10-108HBD | GSM425M10-108HBD | GSM430M10-108HBD | GSM435M10-108HBD |
| Peak Power Watts-Pmax(Wp)* | 415W | 420W | 425W | 430W | 435W |
| Maximum Power Voltage-Vmpp(V) | 31.32 | 31.51 | 31.70 | 31.88 | 32.07 |
| Maximum Power Current-Impp(A) | 13.25 | 13.33 | 13.41 | 13.49 | 13.57 |
| Open Circuit Voltage-Voc(V) | 37.92 | 38.11 | 38.30 | 38.49 | 38.68 |
| Short Circuit Current-Isc(A) | 13.99 | 14.07 | 14.15 | 14.23 | 14.31 |
| Module Efficiency (%) | 21.25 | 21.51 | 21.76 | 22.02 | 22.27 |
| Power Output Tolerance-Pmax(W) | 0~+5 | ||||
| Temperature Coefficient of Pmax | -0.3%/ºC | ||||
| Temperature Coefficient of Voc | -0.25%/ºC | ||||
| Temperature Coefficient of Isc | 0.040%/ºC | ||||
| STC | Irradiance 1000W/m2, Cell Temperature 25, Air Mass AM1.5 | ||||
Module dimensions 1722*1134*30mm
Module per box 37 pieces
Module per 40' container 962 pieces
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