Gallium Arsenide Single Crystal (6N/8N)

Min.Order: 1
Product origin: Zhengzhou, Henan, China
Infringement complaint: complaintComplaint
US$ 1

Description
Gallium arsenide GaAs single crystal rod

Growth method: VGF

Conductive type: N

Doping elements: Si

The diameter: 2-4 Inches
The direction: (100) 150 ± 10off toward 111A

Carrier Concentration
Min: 0.2 E18
Max: 4.0 E18/cm3
The resistivity:
Min: 0.8 E-3
Max: 9.0 E-3Ohm. Cm
Mobility: ≥ 1800cm2/V. S
The dislocation density: ≤ 3500/cm2

We also supply Gallium arsenide GaAs Single crystal, GaAs polycrystal, GaAs wafer, gallium oxide with high purity.

Scroll to Top