Complaint
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 650 | V |
| ID, pulse | 240 | A |
| RDS(ON), max @ VGS=10V | 30 | mΩ |
| Qg | 178 | nC |
| Product Name | Package | Marking |
| OSG60R030HZF | TO247 | OSG60R030HZ |
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 600 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 80 | A |
| Continuous drain current1), TC=100 °C | 50 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
| Continuous diode forward current1), TC=25 °C | IS | 80 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
| Power dissipation3), TC=25 °C | PD | 480 | W |
| Single pulsed avalanche energy5) | EAS | 2500 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.26 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=1 mA | ||
| Gate threshold voltage | VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=2 mA, | |
Drain-source on-state resistance | RDS(ON) | 0.028 | 0.030 | Ω | VGS=10 V, ID=40 A | |
| 0.058 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS=600 V, VGS=0 V | ||
| Gate resistance | RG | 2.1 | Ω | ƒ=1 MHz, Open drain |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 9343 | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz | ||
| Output capacitance | Coss | 708 | pF | |||
| Reverse transfer capacitance | Crss | 15 | pF | |||
| Effective output capacitance, energy related | Co(er) | 345 | pF | VGS=0 V, VDS=0 V-400 V | ||
| Effective output capacitance, time related | Co(tr) | 1913 | pF | |||
| Turn-on delay time | td(on) | 52.1 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A | ||
| Rise time | tr | 105.2 | ns | |||
| Turn-off delay time | td(off) | 125.7 | ns | |||
| Fall time | tf | 4.1 | ns |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 177.9 | nC | VGS=10 V, VDS=400 V, ID=40 A | ||
| Gate-source charge | Qgs | 37.4 | nC | |||
| Gate-drain charge | Qgd | 78.4 | nC | |||
| Gate plateau voltage | Vplateau | 6.2 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.4 | V | IS=80 A, VGS=0 V | ||
| Reverse recovery time | trr | 186.6 | ns | IS=40 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 1.6 | μC | |||
| Peak reverse recovery current | Irrm | 15.4 | A |
