تم بناؤه في Fed Fast & Soft Recovery Frd Ost40n120hmf 10؟ التفاوت المسموح به بين الدوائر القصيرة بقدرة 1200 فولت 40A Fd مدمج إلى 247n إيقاف ميداني الخندق IGBT

Min.Order: 1,000

Product origin: Shanghai, China

Infringement complaint:

Complaint

US$ 0.1 ~ 0.6

Description

General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features

Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode

Applications

Induction converters
Uninterruptible power supplies

Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	1200	V
Maximum junction temperature	175	°C
IC, pulse	160	A
VCE(sat), typ @ VGE=15V	1.45	V
Qg	214	nC

Marking Information

Product Name	Package	Marking
OST40N120HMF	TO247	OST40N120HM

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	1200	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤0.5µs, D<0.001	VGES	±25	V
Continuous collector current¹⁾, TC=25ºC	IC	56	A
Continuous collector current¹⁾, TC=100ºC	IC	40	A
Pulsed collector current²⁾, TC=25ºC	IC, pulse	160	A
Diode forward current¹⁾, TC=25ºC	IF	56	A
Diode forward current¹⁾, TC=100ºC	IF	40	A
Diode pulsed current²⁾, TC=25ºC	IF, pulse	160	A
Power dissipation³⁾, TC=25ºC	PD	357	W
Power dissipation³⁾, TC=100ºC	PD	179	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE=15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj=150 °C	tSC	10	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.42	°C/W
Diode thermal resistance, junction-case	RθJC	0.75	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	1200			V	VGE=0 V, IC=0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.45	1.8	V	VGE=15 V, IC=40 A Tvj=25°C
			1.65		V	VGE=15 V, IC=40 A, Tvj =125°C
			1.8			VGE=15 V, IC=40 A, Tvj =175°C
Gate-emitter threshold voltage	VGE(th)	4.8	5.8	6.8	V	VCE=VGE, ID=0.5 mA
Diode forward voltage	VF		1.9	2.1	V	VGE=0 V, IF=40 A Tvj =25°C
			1.6			VGE=0 V, IF=40 A, Tvj =125°C
			1.5			VGE=0 V, IF=40 A, Tvj =175°C
Gate-emitter leakage current	IGES			100	nA	VCE=0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE=1200V, VGE=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		11270		pF	VGE=0 V, VCE=25 V, ƒ=100 kHz
Output capacitance	Coes		242		pF
Reverse transfer capacitance	Cres		10		pF
Turn-on delay time	td(on)		120		ns	VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		246		ns
Fall time	tf		160		ns
Turn-on energy	Eon		3.14		mJ
Turn-off energy	Eoff		1.02		mJ
Turn-on delay time	td(on)		112		ns	VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A
Rise time	tr		51		ns
Turn-off delay time	td(off)		284		ns
Fall time	tf		148		ns
Turn-on energy	Eon		1.32		mJ
Turn-off energy	Eoff		0.53		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		214		nC	VGE=15 V, VCC=960 V, IC=40 A
Gate-emitter charge	Qge		103		nC
Gate-collector charge	Qgc		40		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		293		ns	VR=600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery charge	Qrr		2.7		μC
Diode peak reverse recovery current	Irrm		25		A

Note

Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.

Version 1: TO247-P package outline dimension

Ordering Information

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-P	30	11	330	6	1980