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Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet
Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet
Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet
Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet
Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet
Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet

Telecom Power RoHS 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340FF To220f Mosfet

Min.Order: 660
Product origin: Shanghai, China
Infringement complaint: complaintComplaint
US$ 0.2

Description
 
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.

Features                                                                                                 
  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Easy to design in

Applications
  • PD charger
  • Large screen display
  • Telecom power
  • Server power


Key Performance Parameters

 
ParameterValueUnit
VDS, min @ Tj(max)700V
ID, pulse36A
RDS(ON), max @ VGS=10V340mΩ
Qg9.6nC

Marking Information

 
Product NamePackageMarking
OSS65R340DFTO252OSS65R340D

 
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
ParameterSymbolValueUnit
Drain-source voltageVDS650V
Gate-source voltageVGS±30V
Continuous drain current1), TC=25 °C
ID		12
A
Continuous drain current1), TC=100 °C7.6
Pulsed drain current2), TC=25 °CID, pulse36A
Continuous diode forward current1), TC=25 °CIS12A
Diode pulsed current2), TC=25 °CIS, pulse36A
Power dissipation3), TC=25 °CPD83W
Single pulsed avalanche energy5)EAS200mJ
MOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/ns
Operation and storage temperatureTstg, Tj-55 to 150°C

Thermal Characteristics
 
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC1.5°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition

Drain-source breakdown voltage
BVDSS		650  
V		VGS=0 V, ID=250 μA
700  VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltageVGS(th)2.9 3.9VVDS=VGS, ID=250 μA

Drain-source on- state resistance
RDS(ON)		 0.300.34
Ω		VGS=10 V, ID=6 A
 0.73 VGS=10 V, ID=6 A, Tj=150 °C
Gate-source leakage current
IGSS		  100
nA		VGS=30 V
  -100VGS=-30 V
Drain-source leakage currentIDSS  1μAVDS=650 V, VGS=0 V

Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 443.5 pF
VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitanceCoss 59.6 pF
Reverse transfer capacitanceCrss 1.7 pF
Turn-on delay timetd(on) 22.4 ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A
Rise timetr 17.5 ns
Turn-off delay timetd(off) 40.3 ns
Fall timetf 7.2 ns

Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 9.6 nC

VGS=10 V, VDS=400 V, ID=6 A
Gate-source chargeQgs 2.2 nC
Gate-drain chargeQgd 4.5 nC
Gate plateau voltageVplateau 6.5 V

Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode forward voltageVSD  1.3VIS=12 A, VGS=0 V
Reverse recovery timetrr 236.5 ns
VR=400 V, IS=6 A,
di/dt=100 A/μs
Reverse recovery chargeQrr 2.2 μC
Peak reverse recovery currentIrrm 19.1 A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
  5. VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.





 





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